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Titanium Sapphire Laser Crystals

Titanium Sapphire Laser Crystals 2019-11-16T23:42:11+00:00

Titanium doped sapphire (Ti3 +: Al2O3) is widely used for adjustable lasers and femtosecond solid-state lasers. It was first used as a gain medium in 1986, and to date, ultrashort is still the best material for pulse production. The substrate-sapphire has good physical and optical properties. High thermal conductivity and good mitigating thermal effects ensure usability for high-power laser.

Explanation

Ti: Sapphire (Titanium doped Sapphire, Al 2 O 3 : Ti 3+ ) has a wide spread band between 660 and 1050 nm, this provides a variety of current and potential applications, such as adjustable-wave-wave lasers, mode. Locked oscillators, chirp-pulse amplifiers, thin disk oscillators / amplifiers and lidar.In addition Ti: Sapphire’s absorption band is centered at 490 nm, ranging from 400 to 650 nm, which makes it several argon ions, frequency doubled Nd: YAG (Nd: YLF). and copper vapor lasers. Due to their fluorescence life of 3.2 μs, Ti: Sapphire crystals can be efficiently pumped with flash lamps in high power laser systems.

Ti: To obtain good quality of sapphire crystals, the doping concentration of Ti 3+ must be kept quite low (eg 0.15% or 0.25%). Therefore, limited pump absorption is usually a This means that a very high pump brightness is required (for high pump density) with small pump spot size. Fortunately Sapphire has excellent thermal conductivity that alleviates its thermal effects even at high laser forces.

Specifications

• Large gain-bandwidth

• Very large emission bandwidth

• Excellent thermal conductivity

• Short-term state life (3.2 us)

• High saturation power

• Relatively high laser cross sections

• High damage threshold

• Strong Kerr effect

• Wide range of possible pump wavelengths

Applications

• Femtosecond pulse lasers

• High repetition oscillators

• Chirped-pulse laser amplifiers

• Multi-pass amplifiers

• Regenerative amplifiers

• Wavelength adjustable CW lasers

• Pulse X-ray production

• Thin disc oscillator

• Petawatt laser systems

Parametreler

Property Value
Chemical formula Ti 3+ : Al 2 O 3
Crystal structure hexagonal
Orientation A-axis in 5 ° E-vector parallel to C-axis
Bulk density 3,98 g / cm 3
Moh hardness 9
Young’s module 335 GPa
Tensile strength 400 MPa
Melting point 2040 ° C
Thermal conductivity 33 W / (m K)
Coefficient of thermal expansion × 5 × 10 -6 K -1
Thermal shock resistance parameter 790 W / m
Refractive index at 633 nm 1,76
Temperature dependence of refractive index 13 × 10 -6 K -1
Ti density for 0.1%. doping 4.56 × 10 19 cm -3

Specifications

Property Value
Fluorescence life 3.2 μs
Emission wavelength 660 ~ 1100 nm
Central emission 800 nm
Concentrations weight% 0.05 (0.35)
Last Configuration Plain / Plain or Brewster / Brewster ends
Emission cross-section at 790 nm (polarization parallel to the c-axis) 41 × 10 -20 cm 2
Coefficient of absorption 0,5 ~ 6,0 cm -1
Central absorption wavelength 490 nm
Success (FOM) 100 ~ 300
Coatings The standard coating is R <5.0% per hundred @ 532 nm and R <0.5% per percent is from 650 nm to 850 nm. Special coatings are supported.

Polishing properties

Property Value
Orientation Tolerance <0.5 °
Thickness / Diameter Tolerance ± 0,05 mm
Surface Flatness <λ / 832 nm
Ripple Distortion <λ / 4 @ 632 nm
Surface quality 05/10
Parallel 30 “
vertical 15′
Open aperture >% 90
groove <0.2 x 45 °
Maximum dimensions dia 150mm

Standart ürünler

Aperture size/ mm Length/ mm End surface coatings FOM
6 5 Brewster Cutting > 120
10 > 150
15 > 150
20 > 180
5 Right angle cut (R <% 1) @ 532 nm + (R <0.3%) 780-820 nm > 120
10 > 150
15 > 150
20 > 180
6×6 5 Brewster Cutting > 120
10 > 150
15 > 150
20 > 180
5 Right angle cut (R <% 1) @ 532 nm + (R <0.3%) 780-820 nm > 120
10 > 150
15 > 150
20 > 180