Titanium doped sapphire (Ti3 +: Al2O3) is widely used for adjustable lasers and femtosecond solid-state lasers. It was first used as a gain medium in 1986, and to date, ultrashort is still the best material for pulse production. The substrate-sapphire has good physical and optical properties. High thermal conductivity and good mitigating thermal effects ensure usability for high-power laser.
Explanation
Ti: Sapphire (Titanium doped Sapphire, Al 2 O 3 : Ti 3+ ) has a wide spread band between 660 and 1050 nm, this provides a variety of current and potential applications, such as adjustable-wave-wave lasers, mode. Locked oscillators, chirp-pulse amplifiers, thin disk oscillators / amplifiers and lidar.In addition Ti: Sapphire’s absorption band is centered at 490 nm, ranging from 400 to 650 nm, which makes it several argon ions, frequency doubled Nd: YAG (Nd: YLF). and copper vapor lasers. Due to their fluorescence life of 3.2 μs, Ti: Sapphire crystals can be efficiently pumped with flash lamps in high power laser systems.
Ti: To obtain good quality of sapphire crystals, the doping concentration of Ti 3+ must be kept quite low (eg 0.15% or 0.25%). Therefore, limited pump absorption is usually a This means that a very high pump brightness is required (for high pump density) with small pump spot size. Fortunately Sapphire has excellent thermal conductivity that alleviates its thermal effects even at high laser forces.
Specifications
• Large gain-bandwidth
• Very large emission bandwidth
• Excellent thermal conductivity
• Short-term state life (3.2 us)
• High saturation power
• Relatively high laser cross sections
• High damage threshold
• Strong Kerr effect
• Wide range of possible pump wavelengths
Applications
• Femtosecond pulse lasers
• High repetition oscillators
• Chirped-pulse laser amplifiers
• Multi-pass amplifiers
• Regenerative amplifiers
• Wavelength adjustable CW lasers
• Pulse X-ray production
• Thin disc oscillator
• Petawatt laser systems
Parametreler
Property | Value |
Chemical formula | Ti 3+ : Al 2 O 3 |
Crystal structure | hexagonal |
Orientation | A-axis in 5 ° E-vector parallel to C-axis |
Bulk density | 3,98 g / cm 3 |
Moh hardness | 9 |
Young’s module | 335 GPa |
Tensile strength | 400 MPa |
Melting point | 2040 ° C |
Thermal conductivity | 33 W / (m K) |
Coefficient of thermal expansion | × 5 × 10 -6 K -1 |
Thermal shock resistance parameter | 790 W / m |
Refractive index at 633 nm | 1,76 |
Temperature dependence of refractive index | 13 × 10 -6 K -1 |
Ti density for 0.1%. doping | 4.56 × 10 19 cm -3 |
Specifications
Property | Value |
Fluorescence life | 3.2 μs |
Emission wavelength | 660 ~ 1100 nm |
Central emission | 800 nm |
Concentrations | weight% 0.05 (0.35) |
Last Configuration | Plain / Plain or Brewster / Brewster ends |
Emission cross-section at 790 nm (polarization parallel to the c-axis) | 41 × 10 -20 cm 2 |
Coefficient of absorption | 0,5 ~ 6,0 cm -1 |
Central absorption wavelength | 490 nm |
Success (FOM) | 100 ~ 300 |
Coatings | The standard coating is R <5.0% per hundred @ 532 nm and R <0.5% per percent is from 650 nm to 850 nm. Special coatings are supported. |
Polishing properties
Property | Value |
Orientation Tolerance | <0.5 ° |
Thickness / Diameter Tolerance | ± 0,05 mm |
Surface Flatness | <λ / 832 nm |
Ripple Distortion | <λ / 4 @ 632 nm |
Surface quality | 05/10 |
Parallel | 30 “ |
vertical | 15′ |
Open aperture | >% 90 |
groove | <0.2 x 45 ° |
Maximum dimensions | dia 150mm |
Standart ürünler
Aperture size/ mm | Length/ mm | End surface | coatings | FOM |
6 | 5 | Brewster Cutting | – | > 120 |
10 | > 150 | |||
15 | > 150 | |||
20 | > 180 | |||
5 | Right angle cut | (R <% 1) @ 532 nm + (R <0.3%) 780-820 nm | > 120 | |
10 | > 150 | |||
15 | > 150 | |||
20 | > 180 | |||
6×6 | 5 | Brewster Cutting | – | > 120 |
10 | > 150 | |||
15 | > 150 | |||
20 | > 180 | |||
5 | Right angle cut | (R <% 1) @ 532 nm + (R <0.3%) 780-820 nm | > 120 | |
10 | > 150 | |||
15 | > 150 | |||
20 | > 180 |